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| NTE2386 MOSFET N-Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. Features: * Repetitive Avalanche Ratings * Dynamic dv/dt Rating * Simple Drive Requirements * Ease of Paralleling Absolute Maximum Ratings: Continuous Drain Current, ID (TC = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A (TC = +100C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Maximum Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W (Derate linearly above +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Gate-to-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 670mJ Avalanche Current (Repetitive or Non-Repetitive, Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V/mS Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case for 10s), TL . . . . . . . . . . +300C Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Breakdown Voltage Drain-to-Source Static Drain-to-Source On-State Resistance On-State Drain Current Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Symbol BVDSS RDS(on) ID(on) VGS(HL) gs IDSS Test Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 3.4A, Note 4 VDS > ID(on) x RDS(on) Max, VGS = 10V, Note 4 VDS = VGS, ID = 250A VDS = 60V, IDC = 3.4A, Note 4 VDS = Max. Rating VCS = 0V VDS = 0.8 x Max Rating , VSS = 0V, TJ = 125C Min 600 - 6.2 2.0 4.7 - - - - - - - - Typ - 0.97 - - 70 - - - - 4.0 6.5 20 1.3 18 65 20 5.0 Max - 1.2 - 4.0 - 250 1000 100 -100 80 8.2 30 20 27 83 20 - Unit V A V mhos A Forward Leakage Current Gate-to-Source Reverse Leakage Current Gate-to-Source Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD VGS = 20V VGS = -20V VGS = 10V, ID = 6.2A, VDS = 0.8 x Max Rating (independent of operating temperature) nA nA nC nC nC ns VDD = 300V, fD = 6.2A, RG = 9.1, RD = 47 (independent at operating temperature) Measured from the drain lead, 6mm (0.25 In) from packaged to center of die. Measured from the source lead, 6mm (0.25 in) from package to source bonding pad. VGS = 0V, VDS = 25V, f = 1.0MHz - - - - nH Internal Source Inductance LS - 18 - Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss - - - 1300 150 30 - - - pF Source-Drain Diode Ratings and Characteristics: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Forward Turn-On Time Symbol IS ISM VSO trr ton Note 1 Test Conditions Min - - - 1.8 Typ - - - 3.6 Max 6.2 26 1.5 7.9 Unit A A V C TJ = 25C, IS = 6.2A, VGS = 0V, Note 4 TJ = 25C, IF = 6.2A di/dt = 100A/s Intrinsic turn-on time is negligible Turn on speed is substantially controlled by LS + LD Thermal Resistance: Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Symbol RthJC RthCS RthJA Test Conditions Min - Typ - 0.12 - Max 1.0 - 30 Unit C/W C/W C/W Mounting surface flat, smooth, and greased Typical socket mount - - Note Note Note Note 1. 2. 3. 4. Repetitive Rating: Pulse Width limited by maximum junction temperature. VDD = 60V, Starting TJ = 25C, L = 27mH, RG = 25, Peak IC = 6.2A ISD 6.2A, di/dt = 80A/s VDD 3VDSS, TJ 150C, Suggested RG = 9.1 Pulse width 300s: Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Source 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .215 (5.45) .430 (10.92) .188 (4.8) R Max Gate .525 (13.35) R Max Drain/Case |
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